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P1510ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m @VGS = 10V 100V 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC= 25 C 64 ID Continuous Drain Current TC= 100 C 45 A IDM 200 Pulsed Drain Current1 IAS Avalanche Current 67 EAS Avalanche Energy L = 0.1 mH 224 mJ TC= 25 C 150 PD Power Dissipation W TC= 100 C 75 Tj, Tstg Operating Junction & Storage Temperature Range -55 to 175 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 1 C / W Junction-to-Ambient RqJA 62.5 1 Pulse width limited by maximum junction temperature. REV 1.0 1 2014-3-12 P1510ATG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS

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