p1510atg.pdf datasheet:

P1510ATGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V100V 64ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC= 25 C64IDContinuous Drain CurrentTC= 100 C45AIDM200Pulsed Drain Current1IASAvalanche Current 67EASAvalanche Energy L = 0.1 mH 224 mJTC= 25 C150PDPower Dissipation WTC= 100C75Tj, TstgOperating Junction & Storage Temperature Range -55 to 175 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 1C / WJunction-to-Ambient RqJA 62.51Pulse width limited by maximum junction temperature.REV 1.0 1 2014-3-12P1510ATGN-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS