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P1604ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 16m @VGS = -10V -40A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -40 ID Continuous Drain Current TC = 100 C -25 A IDM -120 Pulsed Drain Current1 IAS Avalanche Current -40 EAS Avalanche Energy L = 0.1mH 78 mJ TC = 25 C 42 PD Power Dissipation W TC = 100 C 17 TJ, TSTG Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 3 C / W Junction-to-Ambient RqJA 60 1 Pulse width limited by maximum junction temperature. Ver 1.0 1 2012/4/13 P1604ETF P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACT

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 p1604etf.pdf Design, MOSFET, Power

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