p1604etf.pdf datasheet:

P1604ETFP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID -40V 16m @VGS = -10V -40ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-40IDContinuous Drain CurrentTC = 100 C-25AIDM-120Pulsed Drain Current1IASAvalanche Current -40EASAvalanche Energy L = 0.1mH 78 mJTC = 25 C42PDPower Dissipation WTC = 100 C17TJ, TSTGOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 3C / WJunction-to-Ambient RqJA 601Pulse width limited by maximum junction temperature.Ver 1.0 1 2012/4/13P1604ETFP-Channel Enhancement Mode MOSFETELECTRICAL CHARACT