irfp448pbf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irfp448pbf.pdf Principales características:

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Lead (Pb)-free Available D DESCRIPTION TO-247 Third Generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-247 package is preferred for commercial-industrial S applications where higher power levels preclude the use of D S G TO-220 devices. The TO-247 is similar but superior to the N-Channel MOSFET earlier TO-218 package because of its isolated mounting hole.