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si4435dy.pdf Principales características:

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Si4435DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D Lead (Pb)-Free Version is RoHS VDS (V) rDS(on) (W) ID (A) Compliant 0.02 @ VGS = 10 V 8.0 30 30 0.035 @ VGS = 4.5 V 6.0 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 D Top View P-Channel MOSFET Ordering Information Si4435DY-T1 REV A Si4435DY-T1 A E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_ UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-Source Voltage VGS "20 TA = 25_C 8.0 Continuous Drain Current (TJ = 150_C)a ID Continuous Drain Current (TJ = 150_C)a ID TA = 70_C 6.4 A A Pulsed Drain Current IDM 50 Continuous Source Current (Diode Conduction)a IS 2.1 TA = 25_C 2.5 Maximum Power Dissipationa PD W Maximum Power Dissipationa PD W TA = 70_C 1.6 Operating Junction and Storage Temper

 

Keywords - ALL TRANSISTORS. Principales características

 si4435dy.pdf Design, MOSFET, Power

 si4435dy.pdf RoHS Compliant, Service, Triacs, Semiconductor

 si4435dy.pdf Database, Innovation, IC, Electricity

 

 
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