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sihg20n50c.pdf Principales características:

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SiHG20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) at TJ max. 560 Definition RDS(on) ( )VGS = 10 V 0.270 Low Figure-of-Merit Ron x Qg Qg (Max.) (nC) 76 100 % Avalanche Tested Qgs (nC) 21 High Peak Current Capability Qgd (nC) 34 dV/dt Ruggedness Configuration Single Improved Trr/Qrr Improved Gate Charge D High Power Dissipations Capability TO-247AC Compliant to RoHS Directive 2002/95/EC G S S D G N-Channel MOSFET ORDERING INFORMATION Package TO-247AC Lead (Pb)-free SiHG20N50C-E3 Lead (Pb)-free and Halogen-free SiHG20N50C-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 30 TC = 25 C 20 Continuous Drain Current (TJ = 150 C)e VGS at 10 V ID T

 

Keywords - ALL TRANSISTORS. Principales características

 sihg20n50c.pdf Design, MOSFET, Power

 sihg20n50c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sihg20n50c.pdf Database, Innovation, IC, Electricity

 

 

 


 
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