sihg22n50d.pdf Principales características:
SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.230 - Low Input Capacitance (Ciss) Qg max. (nC) 98 - Reduced Capacitive Switching Losses Qgs (nC) 13 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS) Configuration Single Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry TO-247AC - Low Figure-Of-Merit (FOM) Ron x Qg D - Fast Switching Material categorization For definitions please see www.vishay.com/doc?99912 G APPLICATIONS S Consumer Electronics D G - Displays (LCD or Plasma TV S Server and Telecom Power Supplies - SMPS N-Channel MOSFET Industrial - Welding, Induction Heating, Motor Drives Battery Chargers ORDERING I
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