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SiHG22N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.230- Low Input Capacitance (Ciss)Qg max. (nC) 98- Reduced Capacitive Switching LossesQgs (nC) 13- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS)Configuration Single Optimal Efficiency and Operation- Low Cost- Simple Gate Drive CircuitryTO-247AC - Low Figure-Of-Merit (FOM): Ron x QgD- Fast Switching Material categorization: For definitions please seewww.vishay.com/doc?99912 GAPPLICATIONSS Consumer ElectronicsDG- Displays (LCD or Plasma TVS Server and Telecom Power Supplies- SMPSN-Channel MOSFET Industrial- Welding, Induction Heating, Motor Drives Battery ChargersORDERING I