sihh14n60e.pdf Principales características:
SiHH14N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Fully lead (Pb)-free device VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) typ. ( ) at 25 C VGS = 10 V 0.220 Low input capacitance (Ciss) Qg max. (nC) 82 Reduced switching and conduction losses Qgs (nC) 8 Qgd (nC) 16 Ultra low gate charge (Qg) Configuration Single Avalanche energy rated (UIS) Kelvin connection for reduced gate noise PowerPAK 8 x 8 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 4 D APPLICATIONS 1 2 Server and telecom power supplies 3 Switch mode power supplies (SMPS) 3 Power factor correction power supplies (PFC) G Pin 4 Lighting - High-intensity discharge (HID) Pin 1 - Fluorescent ballast lighting S Industrial N-Channel
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