sqs484enw.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

sqs484enw.pdf Principales características:

SQS484ENW www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PowerPAK 1212-8W Single TrenchFET power MOSFET D D 8 D D AEC-Q101 qualified 7 7 D D 6 6 100 % Rg and UIS tested 5 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 1 2 2 S S 3 3 D S S 4 4 S S 1 G Top View Bottom View PRODUCT SUMMARY G VDS (V) 40 RDS(on) ( ) at VGS = 10 V 0.0080 RDS(on) ( ) at VGS = 4.5 V 0.0105 S ID (A) 16 Configuration Single N-Channel MOSFET Package PowerPAK 1212-8W ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 40 V Gate-source voltage VGS 20 TC = 25 C 16 Continuous drain current a ID TC = 125 C 16 Continuous source current (diode conduction) a IS 16 A Pulsed dra