sum70n03-09cp.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

sum70n03-09cp.pdf Principales características:

SUM70N03-09CP Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Optimized for High- or Low-Side V(BR)DSS (V) rDS(on) (W) ID (A) D New Low Thermal Resistance Package 0.0095 @ VGS = 20 V 70 D 100% Rg Tested 30 30 0.014 @ VGS = 4.5 V 58 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D TO-263 DRAIN connected to TAB G G D S Top View S Ordering Information SUM70N03-09CP SUM70N03-09CP-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS V "20 TC = 25_C 70 Continuous Drain Current (TJ = 175_C) ID Continuous Drain Current (TJ = 175_C) ID 40 TC = 125_C A A Pulsed Drain Current IDM 100 Avalanche Current IAR 35 Repetitive Avalanche Energya L = 0.1 mH EAR 61b mJ 93 TC = 25_C