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mmbt2222at.pdf Principales características:

MMBT2222AT COLLECTOR Plastic-Encapsulate Transistors 3 3 NPN Silicon 1 2 1 BASE P b Lead(Pb)-Free SC-89 2 EMITTER (SOT-523F) MAXIMUM RATINGS Value Rating Symbol Unit 40 Collector-Emitter Voltage V CEO Vdc 75 Collector-Base Voltage VCBO Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Unit Max (1) Total Device Dissipation FR-5 Board mW PD 150 TA=25 C R JA 833 Thermal Resistance, Junction to Ambient C/W Junction and Storage, Temperature TJ,Tstg -55 to +150 C DEVICE MARKING MMBT2222AT=1P ELECTRICAL CHARACTERISTICS Characteristics Symbol Unit Max Min OFF CHARACTERISTICS - Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0)(2) V(BR)CEO 40 V Collector-Base Breakdown Voltage (IC= 10 Adc, IE=0) V(BR)CBO 75 V - Emitter-Base Breakdown Voltage (IE= -10

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 mmbt2222at.pdf Design, MOSFET, Power

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