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wfd4n60.pdf Principales características:

WFD4N60 WFD4N60 WFD4N60 WFD4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V.R (Max 2.5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Winsemi s advanced Planar stripe, DMOS technology. This latest technology has Been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 600 V Continuous Drain Current(@Tc=25 ) 4 A ID Continuous D

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