wfd4n60.pdf datasheet:

WFD4N60WFD4N60WFD4N60WFD4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V.R (Max 2.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Winsemis advancedPlanar stripe, DMOS technology. This latest technology hasBeen Especially designed to minimize on-state resistance,have a high Rugged avalanche characteristics. This devicesis specially well Suited for half bridge and full bridge resonanttopology line a Electronic lamp ballast.Absolute Maximum RatingsSymbol Parameter Value UnitsVDSS Drain Source Voltage 600 VContinuous Drain Current(@Tc=25) 4 AIDContinuous D