10n60.pdf datasheet:

isc N-Channel MOSFET Transistor 10N60FEATURESDrain Current I = 9.5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.73(Max)DS(on)Minimum Lot-to-Lot variations for robust device performanceand reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage-Continuous 30 VGSI Drain Current-Continuous 9.5 ADI Drain Current-Single Plused 38 ADMP Total Dissipation @T =25 156 WD CT Max. Operating Junction Temperature 150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 0.8th j-c/WR Thermal Resistance, Junction to Ambient 62.5th j