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2n2222ae.pdf datasheet:

2n2222ae2n2222ae

SEMICONDUCTOR2N2222AETECHNICAL DATAGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifier3applications. They are housed in the SC-89 package whichis designed for low power surface mount applications.1Features 2compliance with RoHS requirements. We declare that the material of product SC-89ORDERING INFORMATIONCOLLECTORDevice Maring Shipping3 2N2222AE 1P 3000 / Tape & Reel1BASE2EMITTERMAXIMUM RATINGS (TA = 25C)Rating Symbol Max UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation (Note 1) PD 150 mWTA = 25CThermal Resistance, R 833 C/WJAJunction-to-AmbientOperating and Storage Junction TJ,

 

Keywords - ALL TRANSISTORS DATASHEET

 2n2222ae.pdf Design, MOSFET, Power

 2n2222ae.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n2222ae.pdf Database, Innovation, IC, Electricity

 

 
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