2n3186.pdf datasheet:

isc Silicon PNP Power Transistor 2N3186DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -100 VCEOV Emitter-Base Voltage -10 VEBOI Collector Current-Continuous -5 ACP Collector Power Dissipation@T =25 75 WC COperating and Storage Junction-65~+200 T TJ, stgTemperature RangeTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.17 /Wth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistors 2N3

Keywords - ALL TRANSISTORS DATASHEET

 2n3186.pdf Design, MOSFET, Power

 2n3186.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3186.pdf Database, Innovation, IC, Electricity