2n3240.pdf datasheet:

isc Silicon NPN Power Transistor 2N3240DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for general purpose high power switch andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 160 VCBOV Collector-Emitter Voltage 160 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 15 ACP Collector Power Dissipation@T =25 150 WC CT Junction Temperature 175 JStorage Temperature -65~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.17 /Wth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor