2n3772j.pdf datasheet:

isc Silicon NPN Power Transistor 2N3772JDESCRIPTIONJ:High DC Current Gain-h :100-150@I = 10AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 60 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 20 ACI Collector Current-Peak 30 ACMI Base Current-Continuous 5 ABP Collector Power Dissipation @T =25 150 WC CT Junction Temperature 200 JStorage Temperature -65~200 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 1.17 /WRth j-c1