2n3773.pdf datasheet:

UTC 2N3773/2N6099 P O W E R TRANSISTORCOMPLEMENTARY SILICONTRANSISTORS The 2N3773/2N6099 are power-base power transistorsdesigned for high power audio, disk head positions andother linear applications. These device can be used inpower switching circuits such as relay or solened drivers,DC to DC converters or inverts.FEATURES*High safe operating area(100 tested) 150W and 100V*Complement Characterized for linear operationTO-3*High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A)*For Low Distortion Complementary DesignsABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETERS SYMBOL VALUE UNITSCollector-base voltage VCBO 160 VCollector-emitter voltage VCEO 140 VEmitter-base voltage VEBO 7 VCollector-emitter voltage VCEX 160 VTotal Power dissipation Pc Tc=25C 150 W Dertate above 25