2n3789.pdf datasheet:

isc Silicon PNP Power Transistor 2N3789DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for medium-speed switching andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -60 VCEOV Emitter-Base Voltage -7 VEBOI Collector Current-Continuous -10 ACP Collector Power Dissipation@T =25 150 WC CT Junction Temperature -65~200 JStorage Temperature -65~200 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.17 /Wth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2N37