2n3905 2n3906.pdf datasheet:
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N3905/DGeneral Purpose Transistors2N3905PNP Silicon*2N3906*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER12MAXIMUM RATINGS3Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 40 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 40 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous IC 200 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Power Dissipation @ TA = 60C PD 250 mWTotal Device Dissipation @ TC = 25C PD 1.5 WattsDerate above 25C 12 mW/COperating and Storage Junction TJ, Tstg 55 to +150 CTemperature RangeTHERMAL CHARACTERISTICS*Characteristic Symbol Max UnitThermal Resistance, Junction to Ambient RqJA 200 C/WThermal Resistance, Junction to Case R
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2n3905 2n3906.pdf Design, MOSFET, Power
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