2n3906a.pdf datasheet:

SEMICONDUCTOR 2N3906ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDLow Saturation Voltage D 0.45E 1.00: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.F 1.27G 0.85Low Collector Output CapacitanceH 0.45_: Cob=4.5pF(Max.) @VCB=5V. HJ 14.00 + 0.50K 0.55 MAXF FComplementary to 2N3904A.L 2.30M 0.45 MAXN 1.001 2 31. EMITTER2. BASEMAXIMUM RATING (Ta=25 )3. COLLECTORCHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage -40 VTO-92VCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VICCollector Current -200 mAIBBase Current -50 mA625 mWTa=25Collector PowerPCDissipation1.5 WTc=25TjJunction