2n3906c.pdf datasheet:

SEMICONDUCTOR 2N3906CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.H 0.45_Low Collector Output Capacitance HJ 14.00 + 0.50K 0.55 MAXF F: Cob=4.5pF(Max.) @VCB=5V.L 2.30M 0.45 MAXComplementary to 2N3904C.N 1.001 2 31. EMITTER2. COLLECTOR3. BASEMAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITTO-92VCBOCollector-Base Voltage -40 VVCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VICCollector Current -200 mAIBBase Current -50 mA625 mWTa=25Collector PowerPCD