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2n3906e.pdf datasheet:

2n3906e2n3906e

SEMICONDUCTOR 2N3906ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBDIM MILLIMETERSFEATURES_+A 1.60 0.10DLow Leakage Current _+2 B 0.85 0.10_+C 0.70 0.10: ICEX=-50nA(Max.), IBL=-50nA(Max.)31D 0.27+0.10/-0.05_@VCE=-30V, VEB=-3V. E 1.60 0.10+_+1.00 0.10GExcellent DC Current Gain Linearity.H 0.50_+J 0.13 0.05Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.JLow Collector Output Capacitance: Cob=4.5pF(Max.) @VCB=-5V.Complementary to 2N3904E.1. EMITTER2. BASE3. COLLECTORMAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITESMVCBOCollector-Base Voltage -40 VVCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VICCollector Current -200 mAIBBase Current -50 mAPCCollector Power Dissipation 100 mWMarki

 

Keywords - ALL TRANSISTORS DATASHEET

 2n3906e.pdf Design, MOSFET, Power

 2n3906e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3906e.pdf Database, Innovation, IC, Electricity

 

 
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