2n3906s.pdf datasheet:

SEMICONDUCTOR2N3906STECHNICAL DATAGeneral Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.3ORDERING INFORMATIONDevice Marking Shipping22N3906S 2A 3000/Tape & Reel 1SOT23MAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage V 40 VdcCEOCOLLECTORCollectorBase Voltage V CBO 40 VdcEmitterBase Voltage V EBO 5.0 Vdc1Collector Current Continuous IC 200 mAdcBASE2THERMAL CHARACTERISTICSEMITTERCharacteristic Symbol Max UnitTotal Device Dissipation FR 5 Board(1) P D 225 mW T A =25 CDerate above 25C 1.8 mW/C556 C/WJATotal Device Dissipation P D 300 mWAlumina Substrate, (2) T A = 25CDerate above 25C 2.4 mW/CThermal Resistance Junction to Ambient R JA 417 C/WJunction and Storage Temperature T J , T st