2n3906s.pdf datasheet:

SEMICONDUCTOR 2N3906STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LDIM MILLIMETERS_+FEATURES A 2.93 0.20B 1.30+0.20/-0.15Low Leakage CurrentC 1.30 MAX23 D 0.40+0.15/-0.05: ICEX=-50nA(Max.), IBL=-50nA(Max.)E 2.40+0.30/-0.201G 1.90@VCE=-30V, VEB=-3V.H 0.95Excellent DC Current Gain Linearity.J 0.13+0.10/-0.05K 0.00 ~ 0.10QLow Saturation Voltage L 0.55P PM 0.20 MIN: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.N 1.00+0.20/-0.10Low Collector Output Capacitance P 7Q 0.1 MAX: Cob=4.5pF(Max.) @VCB=-5V.MComplementary to 2N3904S.1. EMITTER2. BASE3. COLLECTORMAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITSOT-23VCBOCollector-Base Voltage -40 VVCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VICCollector Current -200