2n3906sc.pdf datasheet:

SEMICONDUCTOR 2N3906SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESLow Leakage Current: ICEX=-50nA(Max.), IBL=-50nA(Max.)@VCE=-30V, VEB=-3V.Excellent DC Current Gain Linearity.Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.Complementary to 2N3904SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage -40 VVCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VICCollector Current -200 mAIBBase Current -50 mAPC *Collector Power Dissipation 350 mWTjJunction Temperature 150Tstg -55150 Storage Temperature RangeNote : * Package Mounted On 99.5% Alumina 1080.6)2015. 5. 12 Revision No : 0 1/32N3906SCELECTRICAL CHARACTERISTICS (Ta=25)CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. M