2n3906u.pdf datasheet:

SEMICONDUCTOR 2N3906UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2Low Leakage Current _+B 1.25 0.15_+C 0.90 0.10: ICEX=-50nA(Max.), IBL=-50nA(Max.)31D 0.3+0.10/-0.05_E +2.10 0.20@VCE=-30V, VEB=-3V.G 0.65Excellent DC Current Gain Linearity.H 0.15+0.1/-0.06J 1.30Low Saturation Voltage K 0.00-0.10L 0.70: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.H_+M 0.42 0.10Low Collector Output CapacitanceN 0.10 MINN NK: Cob=4.5pF(Max.) @VCB=-5V.Complementary to 2N3904U.1. EMITTER2. BASE3. COLLECTORMAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITUSMVCBOCollector-Base Voltage -40 VVCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VICCollector Current -200 mAIBBase Current