2n4395.pdf datasheet:

isc Silicon NPN Power Transistor 2N4395DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 40 VCEOV Emitter-Base Voltage 4 VEBOI Collector Current-Continuous 5 ACP Collector Power Dissipation@T =25 62 WC CT Junction Temperature 150 JStorage Temperature -65~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 2 /Wth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Tran