2n4398.pdf datasheet:

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4398 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5301 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current-Continuous -30 A CI Collector Current-Peak -50 A CMI Base Current-Continuous -7.5 A BI Base Current-Peak -15 A BMCollector Power Dissipation@Ta=25 5 P W CCollector Power Dissipation@T =25 200 CT Junction Temperature 200 JTstg Storage Temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistanc