2n5400.pdf datasheet:

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400TO-92Plastic PackageCBEAmplifier TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 120 VCollector Base Voltage VCBO 130 VEmitter Base Voltage VEBO 5.0 VCollector Current Continuous IC 600 mAPower Dissipation @ Ta=25C PD 625 mWDerate Above 25C 5.0 mw/CPower Dissipation @ Tc=25C PD 1.5 WDerate Above 25C 12 mw/COperating And Storage Junction Tj, Tstg - 55 to +150 CTemperature RangeTHERMAL RESISTANCEJunction to Case Rth (j-c) 83.3 C/WRth (j-a)Junction to Ambient in free air 200 C/WELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITCollector Emitter Voltage *VCEO IC=1mA, IB=0 120 V

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