2n5400s.pdf datasheet:

SEMICONDUCTOR 2N5400STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERSFEATURES _+2.93 0.20AB 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX2: VCBO=-130V, VCEO=-120V 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20Low Leakage Current.1G 1.90H 0.95: ICBO=-100nA(Max.) @VCB=-100VJ 0.13+0.10/-0.05K 0.00 ~ 0.10Low Saturation VoltageL 0.55P P: VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mAM 0.20 MINN 1.00+0.20/-0.10Low Noise : NF=8dB (Max.)P 7M1. EMITTERMAXIMUM RATING (Ta=25 )2. BASE3. COLLECTORCHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage -130 VVCEOCollector-Emitter Voltage -120 VSOT-23VEBOEmitter-Base Voltage -5 VICCollector Current -600 mAIBBase Current -100 mAPC *Collector Power Dissipation 350 mWTjJunction