2n5401.pdf datasheet:

2N5401PNP TransistorsTO-9211. EMITTER 232. BASE3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2N5401UnitCollector-Emitter Voltage VCEO -150 VdcCollector-Base Voltage VCBO -160VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC600 mAdcTotal Device Dissipation T =25 C PD W0.625AJunction Temperature T 150j CStorage, Temperature Tstg C-55 to +150ELECTRICAL CHARACTERISTICSCharacteristics Symbol Min Max Unit-Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) V(BR)CEO -150VdcCollector-Base Breakdown Voltage (IC= -100 Adc, IE=0) V(BR)CBO -160 - Vdc-VdcV(BR)EBO -5.0Emitter-Base Breakdown Voltage (IE= -10 Adc, IC=0)ICBO --0.05 uAdcCollector Cutoff Current (V = -120 Vdc, IE=0)CB-IEBOdEmitter Cutoff Current (VEB= -4.0 V c, I =0) -0.05 uAdcCWEITRONhttp://www.weitron.com.tw2