2n5401n.pdf datasheet:

2N5401NSemiconductor Semiconductor PNP Silicon Transistor Description General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = -160V, VCEO = -160V Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) Complementary pair with 2N5551N Ordering Information Type NO. Marking Package Code 2N5401N 2N5401 TO-92N Outline Dimensions unit : mm 4.20~4.402.25 Max.0.52 Max.0.90 Max.1.27 Typ.0.40 Max.1 2 33.55 TypPIN Connections 1. Emitter 2. Base 3. Collector KSD-T0C040-000 14.20~4.4013.50~14.502.14 Typ.3.09~3.292N5401NAbsolute Maximum Ratings (Ta=25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -160 VEmitter-base voltage VEBO -5 VCollector current IC -600 mACollector power dissipation PC 400 mW