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2n5401rlrag.pdf datasheet:

2n5401rlrag2n5401rlrag

2N5401Amplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector - Emitter Voltage VCEO 150 VdcCollector - Base Voltage VCBO 160 Vdc1Emitter - Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Device Dissipation @ TC = 25C PD 1.5 WDerate above 25C 12 mW/CTO-92CASE 29Operating and Storage Junction TJ, Tstg -55 to +150 CSTYLE 1Temperature RangeTHERMAL CHARACTERISTICS1122Characteristic Symbol Max Unit 33STRAIGHT LEAD BENT LEADThermal Resistance, Junction-to-Ambient RqJA 200 C/WBULK PACK TAPE & REELAMMO PACKThermal Resistance, Junction-to-Case RqJC 83.3 C/WStresses exceeding Maximum Ratings may damage the

 

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 2n5401rlrag.pdf Design, MOSFET, Power

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