2n6653.pdf datasheet:

isc Silicon NPN Power Transistor 2N6653DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 350 VCBOV Collector-Emitter Voltage 300 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 20 ACI Collector Current-Peak 30 ACMI Base Current-Continuous 10 ABCollector Power DissipationP 150 WC@T =25CT Junction Temperature -65~175 jT Storage Temperature Range -65~200 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.0 /Wt