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2n6653.pdf datasheet:

2n66532n6653

JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorMAXIMUN RATINGS(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 350 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 20 A ICM Collector current-peak 30 A PT Total power dissipation Tc=25 150 WTj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNITRth j-c Thermal resistance from junction t

 

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 2n6653.pdf Design, MOSFET, Power

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