2n6766 irf250.pdf datasheet:
PD - 90338EIRF250REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766HEXFETTRANSISTORS JANTXV2N6766THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF250 200V 0.085 30AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-3The efficient geometry and unique processing of this latestState of the Art design achieves: very low on-state resis-tance combined with high transconductance; superior re-verse energy and diode recovery dv/dt capability.The HEXFET transistors also feature all of the well estab-Features:lished advantages of MOSFETs such as voltage control,very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratingsstability of the electrical parameters. Dynamic dv/dt Rating Hermetically Sealed
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