2n7002-3.pdf datasheet:

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1Features3High density cell design for low RDS(ON)Voltage controlled small signal switchRugged and reliable1 2High saturation current capability+0.02+0.10.15 -0.020.95-0.1+0.11.9-0.21.Base1 GATE2.Emitter2 SOURCE3.collector3 DRAINAbsolute Maximum Ratings Ta=25Parameter Symbol Rating UnitDrain-Source voltage VDS 60 VDrain Current ID 115 mAPower Dissipation PD 225 mWJunction Temperature TJ 150Storage Temperature Tstg -55 to 150Electrical Characteristics Ta = 25Parameter Symbol Testconditions Min Typ Max UnitDrain-source breakdown voltage VDSS VGS=0 V, ID=10 0 A 60 VZero gate voltage drain current IDSS VDS=60 V, VGS=0 V 80 nAGate-body leakage lGSS VDS=0 V, VGS= 25 V 80 nAGate-threshold voltage VGS(th) VDS=VGS, ID=250