2n7051.pdf datasheet:

2N7051NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 100 VVCBO Collector-Base Voltage 100 VVEBO Emitter-Base Voltage 12 VIC Collector Current 1.5 ATJ, TSTG Storage Temperature -55 ~ 150 C* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1. These rtings are based on a maximum junction temperature of 150 degrees C.2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle