2sa1103.pdf datasheet:

isc Silicon PNP Power Transistor 2SA1103DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -100V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -100 VCEOV Emitter-Base Voltage -6 VEBOI Collector Current-Continuous -7 ACI Base Current-Continuous -3 ABCollector Power DissipationP 70 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA1103ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDI