2sa1107.pdf datasheet:

JMnic Product Specification Silicon PNP Power Transistors 2SA1107 DESCRIPTION With MT-200 package High power dissipations APPLICATIONS Audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A PC Collector power dissipation TC=25 120 WTj Junction temperature 150 Tstg Storage temperature -55~150 JMnic Product Specification Silicon PNP Power Transistors 2SA1107 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNITV(BR)