2sa1109.pdf datasheet:

isc Silicon PNP Power Transistor 2SA1109DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emitter Voltage -180 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -10 ACI Collector Current-Peak -14 ACMCollector Power DissipationP 200 WC@T =25CT Junction Temperature 150 jStorage Temperature -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA1109ELECTRICAL CHARACTERISTICSTj=25 unless otherwise specifi