2sa1802.pdf datasheet:

2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 200 to 600 (V = -2 V, I = -0.5 A) FE (1) CE C: h = 140 (min), 200 (typ.) (V = -2 V, I = -3 A) FE (2) CE C Low collector saturation voltage : V = -0.5 V (max) (I = -3 A, I = -60 mA) CE (sat) C B Complementary to 2SC4681 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -30 VVCES -30 Collector-emitter voltage V VCEO -10 Emitter-base voltage VEBO -6 V JEDEC DC IC -3 Collector current A Pulsed JEITA ICP -6 (Note 1) TOSHIBA 2-7B1ABase current IB -0.5 AWeight: 0.36 g (typ.) Ta = 25C 1.0 Collector power PC W dissipation Tc = 25C 10 Junction temperature Tj 150 CStorage temperature range Tstg -