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2sa1806 e.pdf datasheet:

2sa1806_e2sa1806_e

Transistor2SA1806Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat). 1SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.2 0.1Collector to base voltage VCBO 15 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 4 VPeak collector current ICP 100 mA 1:Base2:Emitter EIAJ:SC75Collector current IC 50 mA3:Collector SSMini Type PackageCollector power dissipation PC 125 mWMarking symbol : AKJunction temperature Tj 125 CStorage temperature Tstg 55 ~ +125 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions m

 

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 2sa1806 e.pdf Design, MOSFET, Power

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