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2sa2154.pdf datasheet:

2sa21542sa2154

2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = -50 V, IC = -100 mA (max) Excellent hFE linearity : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE : hFE = 120~400 1 Complementary to 2SC6026 32 0.80.050.10.051.00.05Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 V0.10.05Emitter-base voltage VEBO -5 VCollector current IC -100 mA1.BASE Base current IB -30 mA2.EMITTER 3.COLLECTORfSMCollector power dissipation PC 50 mWJunction temperature Tj 150 CJEDEC Storage temperature range Tstg -55~150 CJEITA Note: Using continuously under heavy loads (e.g. the application of high temp

 

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