2sa2154ct-y 2sa2154ct-gr.pdf datasheet:

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : V = -50V, I = -100mA (max) CEO C Unit: mm Excellent h linearity FE : h (I = -0.1 mA) / h (I = -2 mA)= 0.95 (typ.) FE C FE C High h h = 120 to 400 FE : FE Complementary to 2SC6026CT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Base current IB -30 mA Collector power dissipation PC 100* mW Junction temperature Tj 150 C 1.BASE Storage temperature range Tstg -55 to 150 C 2.EMITTER CST3 3.COLLECTOR * : Mounted on FR4 board (10 mm 10 mm 1 mmt) Note: Using continuously under heavy loads (e.g. the application o