2sa2154mfv.pdf datasheet:

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current 0.80 0.05: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120~400 Complementary to 2SC6026MFV 32Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 V1.BASE 2.EMITTER Emitter-base voltage VEBO -5 VVESM 3.COLLECTORCollector current IC -150 mABase current IB -30 mAJEDEC Collector power dissipation PC 150* mWJEITA Junction temperature Tj 150 CTOSHIBA 2-1L1AStorage temperature range Tstg -55~150 CWeight: 1.5 mg (typ.) Note: Using continuously under heavy loa